The SERB-Department of Science & Technology, Govt. of India Project amounting to 21.94 Lakhs from 2016-2019 is an ongoing Venture initiated by Dr B Bindu, Professor – School of Electronics Engineering. The Project researches on the ‘Development of a Modelling Framework for Variability-Aware Design of Strained FinFET based Mixed Signal Circuits’ discussing strained-channel FinFETs which are more sensitive to CHC stress. The device scaling increases the lateral electric field of the channel specifically in the pinch off region. The electrons gain higher kinetic energy in the presence of high lateral electric field, break the Si-H bonds in the oxide interface and form the dangling bonds. These dangling bonds contribute to the threshold voltage degradation which increases with respect to the stress time and degrades the critical device parameters such as threshold voltage, subthreshold slope, trans conductance, mobility and drain current.